Crystallization of diamond-like carbon to graphene under low energy ion beam modification

TL;DR

This study demonstrates that low-energy argon ion beam modification can induce partial crystallization of diamond-like carbon into graphene at low temperatures, potentially enabling direct graphene fabrication on insulating substrates for electronic applications.

Contribution

The paper introduces a novel low-temperature method using low-energy ion beams to convert diamond-like carbon into graphene, advancing graphene fabrication techniques.

Findings

Resistivity of carbon films decreases after ion irradiation.

Raman spectra indicate partial crystallization to defected graphene.

Method shows promise for direct graphene synthesis on insulators.

Abstract

Low-energy ion beam modification was proposed to create graphene on the top of the insulated diamond-like carbon films. In such low-temperature fabrication process the surface of the amorphous carbon could crystallize to graphene as a result of point defect creation and enhanced diffusion caused by the ion bombardment. In the experiment 130 eV argon ion irradiation was used. After the modification the resistivity of the sample surface drops. Raman spectra of the samples measured at 633 nm showed partial crystallization and were similar to the spectra of defected graphene. This result is very encouraging and we hope that by improving this technology it will be possible to fabricate defect-free graphene, which can be used in electronics without transfer to other substrates