Highly p-doped graphene obtained by fluorine intercalation

TL;DR

This paper introduces a fluorine intercalation technique to produce highly p-doped graphene on SiC, significantly shifting the Fermi level and enhancing its electronic properties for potential applications.

Contribution

The study demonstrates a novel fluorine intercalation method that effectively decouples epitaxial graphene and induces high p-type doping without covalent bonding.

Findings

Achieved a hole density of approximately 4.5 x 10^13 cm^-2

Fermi level shifted 0.79 eV above the Dirac point

Fluorine saturates substrate Si bonds without covalent bonding to graphene

Abstract

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .