Fabrication of InP nano pillars by ECR Ar ion irradiation
D. Paramanik, T. T. Suzuki, N. Ikeda, Y. Sugimoto, T. Nagai, M., Takeguchi, C. Van Haesendonck

TL;DR
This paper reports the fabrication of InP nano pillars using ECR Ar+ ion irradiation, analyzing their morphology, growth direction, and crystalline structure, with potential for damage-free transfer and detailed compositional analysis.
Contribution
It introduces a novel method for fabricating crystalline InP nano pillars with controlled orientation and morphology via ECR Ar+ ion irradiation, and characterizes their structural and compositional properties.
Findings
Nano pillars have average width of 50 nm and length of 500 nm.
Growth direction aligns with the reflection of the ion beam.
Nano pillars are nearly crystalline with a slight amorphous surface layer.
Abstract
Regular arrays of InP nano pillars have been fabricated by low energy Electron Cyclotron Resonance (ECR) Ar+ ion irradiation on InP(111) surface. Several scanning electron microscopy (SEM) images have been utilized to invetsigate the width, height, and orientation of these nano pillars on InP(111) surfaces. The average width and length of these nano-pillars are about 50 nm and 500 nm, respectively. The standing angle with respect to the surface of the nano-pillars depend on the incidence angle of the Ar ion irradiation during the fabrication process. Interestingly, the growth direction of the nano pillars are along the reflection direction of the ion beam and the standing angles are nearly same as the ion incidence angle with the surface normal. This nano-pillas are easily transferred from the InP surface to double sided carbon tape without any damage. High Resolution Transmission…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsNanowire Synthesis and Applications · Integrated Circuits and Semiconductor Failure Analysis · GaN-based semiconductor devices and materials
