DOS-limited contact resistance in graphene FETs

TL;DR

This paper reviews the contact properties of graphene transistors, emphasizing the importance of contact resistivity and how the low density of states in graphene affects current injection, highlighting current challenges and future needs.

Contribution

It provides a systematic review of metal/graphene contact properties and discusses the current status and future requirements for reducing contact resistivity.

Findings

Contact resistivity is a critical factor in graphene FET performance.

Low density of states in graphene can suppress current injection from metal contacts.

The paper identifies key challenges and future directions for improving contact quality.

Abstract

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties as performance killers, as a very small density of states in graphene might suppress the current injection from metal to graphene. This paper systematically reviews the metal/graphene contact properties and discusses the present status and future requirements of the specific contact resistivity.