The effect of atomic-scale defects and dopants on graphene electronic structure

TL;DR

This paper reviews how atomic-scale defects and dopants influence graphene's electronic properties, enabling potential applications in electronic devices through defect engineering and superlattice formation.

Contribution

It introduces methods to predict and engineer graphene electronic structures by arranging defects and dopants, including superlattice formation and bandgap opening.

Findings

Defects can induce magnetic structures in graphene.

Arranged defects form superlattices with bandgaps and new Dirac cones.

Dopants create massive Dirac carriers with gapped structures.

Abstract

Graphene, being one-atom thick, is extremely sensitive to the presence of adsorbed atoms and molecules and, more generally, to defects such as vacancies, holes and/or substitutional dopants. This property, apart from being directly usable in molecular sensor devices, can also be employed to tune graphene electronic properties. Here we briefly review the basic features of atomic-scale defects that can be useful for material design. After a brief introduction on isolated $p_z$ defects, we analyse the electronic structure of multiple defective graphene substrates, and show how to predict the presence of microscopically ordered magnetic structures. Subsequently, we analyse the more complicated situation where the electronic structure, as modified by the presence of some defects, affects chemical reactivity of the substrate towards adsorption (chemisorption) of atomic/molecular species, leading to preferential sticking on specific lattice positions. Then, we consider the reverse problem, that is how to use defects to engineer graphene electronic properties. In this context, we show that arranging defects to form honeycomb-shaped superlattices (what we may call "supergraphenes") a sizeable gap opens in the band structure and new Dirac cones are created right close to the gapped region. Similarly, we show that substitutional dopants such as group IIIA/VA elements may have gapped quasi-conical structures corresponding to massive Dirac carriers. All these possible structures might find important technological applications in the development of graphene-based logic transistors.