Integer Quantum Hall Effect in Trilayer Graphene

TL;DR

This paper reports the observation of the Integer Quantum Hall Effect in trilayer graphene, revealing how stacking order influences quantum Hall plateaus and carrier behavior under magnetic fields.

Contribution

It presents the first experimental observation of IQHE in trilayer graphene and compares results with theoretical models to determine stacking order effects.

Findings

IQHE observed in trilayer graphene.

Stacking order affects plateau structure.

Hall resistance vanishes at low filling factors.

Abstract

The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder.