Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs

TL;DR

This paper presents a novel heterostructure of diluted magnetic semiconductors with a two-dimensional electron gas in InAs, demonstrating giant Zeeman splitting due to exchange interaction with Mn ions, achieved via molecular-beam epitaxy.

Contribution

It introduces a new growth method for hybrid AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface, enabling enhanced magnetic effects in 2D electron systems.

Findings

Giant Zeeman splitting confirmed by microwave-induced spin currents

Successful growth of coherent hybrid heterostructures

Enhanced magnetic interactions in 2D electron gas

Abstract

A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.