Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots

TL;DR

This study demonstrates that careful reactor handling in MetalOrganic Vapour Phase Epitaxy significantly improves the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots, achieving linewidths comparable to ultra-high vacuum methods.

Contribution

It shows that reactor environment and handling are critical for producing high-quality quantum dots with narrow emission linewidths in MOCVD.

Findings

Quantum dots exhibit linewidths of ~27 μeV, comparable to MBE.

Reactor handling is crucial for high optical quality.

Spectral purity depends on growth environment control.

Abstract

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27{\mu}eV) and comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.