Aharonov-Casher effect in Bi$_{\rm 2}$Se$_{\rm 3}$ square-ring interferometers

TL;DR

This paper demonstrates the electrical control of spin interference effects in Bi$_{2}$Se$_{3}$ ring interferometers, highlighting their potential for spintronic applications due to large tunability of spin precession.

Contribution

It reports the observation of Aharonov-Casher oscillations and large gate-tunable spin precession in Bi$_{2}$Se$_{3}$ interferometers, advancing spin control in topological insulator materials.

Findings

Observation of Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations.

Detection of Aharonov-Casher oscillations with gate voltage.

Large tunability of spin precession angle achieved.

Abstract

Electrical control of spin dynamics in Bi$_{\rm 2}$Se$_{\rm 3}$ was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against magnetic field, and Aharorov-Casher resistance oscillations against gate voltage were observed in the presence of a Berry phase of $\pi$. A very large tunability of spin precession angle by gate voltage has been obtained, indicating that Bi$_{\rm 2}$Se$_{\rm 3}$-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.