Atomistic Simulations of Flash Memory Materials Based on Chalcogenide Glasses

TL;DR

This paper reviews atomistic simulations of chalcogenide glasses used in flash memory, focusing on Ge2Sb2Te5 and Ge-Se-Cu-Ag, highlighting recent ab-initio molecular dynamics results and previous research contributions.

Contribution

It provides a comprehensive review of recent simulation studies on flash memory materials based on chalcogenide glasses, including new simulation results and analysis.

Findings

Insights into atomic structures of Ge2Sb2Te5 and Ge-Se-Cu-Ag

Simulation results supporting memory device performance

Comparison with previous experimental data

Abstract

In this chapter, by using ab-initio molecular dynamics, we introduce the latest simulation results on two materials for flash memory devices: Ge2Sb2Te5 and Ge-Se-Cu-Ag. This chapter is a review of our previous work including some of our published figures and text in Cai et al. (2010) and Prasai & Drabold (2011) and also includes several new results.