The efficient spin injector scheme based on Heusler materials

TL;DR

This paper proposes a design scheme for high spin-polarization interfaces in magneto-resistive devices using compatible Heusler materials, verified through first-principles calculations.

Contribution

It introduces a rational design approach for stable, high spin-polarization interfaces based on structural and chemical compatibility of Heusler materials.

Findings

Interface remains half-metallic with proper layer selection

First-principles calculations confirm stability of designed interfaces

Provides a simple rule for choosing material combinations

Abstract

We present the rational design scheme intended to provide the stable high spin-polarization at the interfaces of the magneto-resistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principal calculations verify that interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediate between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.