Electrical spin injection and transport in Germanium

TL;DR

This paper demonstrates electrical spin injection, transport, and detection in bulk germanium, showing non-local magnetoresistance up to 225K and linking spin relaxation to momentum scattering.

Contribution

First experimental demonstration of electrical spin injection and transport in bulk germanium, with analysis of spin relaxation mechanisms.

Findings

Non-local magnetoresistance observed up to 225K

Spin relaxation rate correlates with momentum scattering rate

Bias dependence of spin lifetime analyzed

Abstract

We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.