Weak localization of Dirac fermions in graphene beyond the diffusion regime
M.O. Nestoklon, N.S. Averkiev, and S.A.Tarasenko

TL;DR
This paper develops a comprehensive microscopic theory for weak localization of Dirac fermions in graphene, applicable across all weak magnetic fields, and calculates the resulting magnetoresistance.
Contribution
It introduces a novel microscopic framework that extends weak localization theory to the entire range of weak magnetic fields for Dirac fermions.
Findings
The theory accurately predicts magnetoresistance in graphene.
Application to topological insulators confirms the model's broad relevance.
Provides insights into quantum interference effects in 2D Dirac materials.
Abstract
We develop a microscopic theory of the weak localization of two-dimensional massless Dirac fermions which is valid in the whole range of classically weak magnetic fields. The theory is applied to calculate magnetoresistance caused by the weak localization in graphene and conducting surfaces of bulk topological insulators.
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