Ambipolar bistable switching effect of graphene

TL;DR

This paper reports on the ambipolar bistable switching effect in graphene, demonstrating reversible hysteresis influenced by charge carriers and proposing a charging-based model supported by simulations.

Contribution

It introduces a novel understanding of ambipolar bistable switching in graphene and validates it with transport model simulations, suggesting ways to enhance device performance.

Findings

Reproducible current hysteresis observed in graphene devices.

Switching sequence depends on charge carrier type (holes or electrons).

Charging effect explains the hysteretic behavior.

Abstract

Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and electrons, is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the ON/OFF ratio of graphene resistive switching are suggested.