Tunneling characteristics of graphene
Young Jun Shin, Gopinadhan Kalon, Jaesung Son, Jae Hyun Kwon, Jing, Niu, Charanjit S. Bhatia, Gengchiau Liang, and Hyunsoo Yang
TL;DR
This paper investigates the tunneling behavior and negative differential conductance in graphene devices, revealing effects of electric breakdown and structural transformation, and demonstrates a high ON/OFF memory switching ratio.
Contribution
It provides new insights into the tunneling characteristics of graphene under high electric fields and introduces a memory switching effect with a 100000% ON/OFF ratio.
Findings
Negative differential conductance observed before breakdown
Tunneling barrier formation due to structural transformation
Memory switching effect with 100000% ON/OFF ratio
Abstract
Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of non-uniform disordered graphene is confirmed. A memory switching effect of 100000% ON/OFF ratio is demonstrated in the tunneling regime which can be employed in various applications.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.