Dynamic Systems Model for Filamentary Mem-Resistors

TL;DR

This paper introduces a dynamic systems model for filamentary mem-resistors that captures the behavior of memory resistors with filament conductive bridges, considering tunneling and Schottky barriers, applicable across various materials.

Contribution

It presents a novel general model for filamentary mem-resistors incorporating dynamic barriers, expanding understanding of their frequency response and applicability.

Findings

Model captures dynamic tunneling and Schottky barriers.

Applicable to various mem-resistor materials.

Brief discussion on frequency response.

Abstract

A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a dynamic Schottky barrier (associated with the electron depletion width surrounding the filament-electrode gap). A general model is formulated which may be applicable to many different forms of memory resistor materials. The frequency response of the model is briefly discussed. Keywords- mem-resistor, non-linear dynamic systems, RRAM, ReRAM, Schottky junction, tunneling junction