Local Electrical Stress-Induced Doping and Formation of 2D Monolayer Graphene P-N Junction

TL;DR

This paper presents a method to locally dope monolayer graphene using electrical stress, enabling tunable N- to P-type doping and the formation of P-N junctions, with mechanisms involving surface chemistry and charge transfer.

Contribution

It introduces a novel electrical stressing technique for controllable doping and P-N junction formation in 2D graphene monolayers, expanding doping methods.

Findings

Doping in graphene can be tuned from N-type to P-type with electrical stress.

Electrical stressing induces P-N junctions in monolayer graphene.

Surface chemistry modification and charge transfer are key mechanisms.

Abstract

We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on 2D graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing.