Micrometer-scale ballistic transport in encapsulated graphene at room temperature

TL;DR

This paper demonstrates room-temperature ballistic transport over micrometer distances in encapsulated graphene, revealing negative bend resistance and anomalous Hall effects, enabled by hexagonal boron-nitride encapsulation.

Contribution

It provides experimental evidence of micrometer-scale ballistic transport at room temperature in encapsulated graphene, a significant advancement for nanoelectronics.

Findings

Room-temperature ballistic transport over micrometers in graphene

Observation of negative bend resistance and anomalous Hall effect

Encapsulation enhances graphene's stability and electronic properties

Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.