Spin-Orbit Symmetries of Conduction Electrons in Silicon

TL;DR

This paper derives a spin-dependent Hamiltonian for silicon's conduction electrons, providing analytical expressions and spin relaxation insights that align well with experimental data, aiding spin property studies in silicon.

Contribution

The paper introduces a new spin-dependent Hamiltonian specific to silicon's conduction band, enabling detailed analysis of spin dynamics and relaxation mechanisms.

Findings

Excellent agreement with experimental spin relaxation data

Analytical expressions for spin-dependent states derived

Hamiltonian applicable to silicon spin property studies

Abstract

We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the multivalley conduction band. We find excellent agreement with experimental results. Similar to the usage of the Kane Hamiltonian in direct band-gap semiconductors, the new Hamiltonian can be used to study spin properties of electrons in silicon.