Sensing electric fields using single diamond spins

TL;DR

This paper demonstrates a new quantum sensing technique using single nitrogen-vacancy spins in diamond to detect electric fields at ambient conditions with high sensitivity, enabling applications in material science and bioimaging.

Contribution

The authors introduce a novel method for electric field sensing using NV center spins in diamond, achieving high sensitivity and tunability between electric and magnetic sensing modes.

Findings

Achieved electric field sensitivity of ~140 V/cm/√Hz.

Can detect the electric field of a single elementary charge at ~150 nm.

Demonstrated switching between electric and magnetic sensing modes.

Abstract

The ability to sensitively detect charges under ambient conditions would be a fascinating new tool benefitting a wide range of researchers across disciplines. However, most current techniques are limited to low-temperature methods like single-electron transistors (SET), single-electron electrostatic force microscopy and scanning tunnelling microscopy. Here we open up a new quantum metrology technique demonstrating precision electric field measurement using a single nitrogen-vacancy defect centre(NV) spin in diamond. An AC electric field sensitivity reaching ~ 140V/cm/\surd Hz has been achieved. This corresponds to the electric field produced by a single elementary charge located at a distance of ~ 150 nm from our spin sensor with averaging for one second. By careful analysis of the electronic structure of the defect centre, we show how an applied magnetic field influences the electric field sensing properties. By this we demonstrate that diamond defect centre spins can be switched between electric and magnetic field sensing modes and identify suitable parameter ranges for both detector schemes. By combining magnetic and electric field sensitivity, nanoscale detection and ambient operation our study opens up new frontiers in imaging and sensing applications ranging from material science to bioimaging.