Klein Tunneling and Berry Phase $\pi$ in Bilayer Graphene with a Band Gap
Sunghun Park, H.-S. Sim

TL;DR
This paper demonstrates that Klein tunneling persists in gapped bilayer graphene under specific conditions, attributed to a Berry phase of π, with implications for electron optics devices.
Contribution
It reveals the persistence of Klein tunneling in gapped bilayer graphene due to Berry phase π, extending understanding beyond the gapless case.
Findings
Klein tunneling exists in gapped bilayer graphene with balanced gaps.
The Klein effect is linked to Berry phase π, not 2π.
The effect can be observed in electronic Veselago lenses.
Abstract
Klein tunneling in gapless bilayer graphene, perfect reflection of electrons injecting normal to a pn junction, is expected to disappear in the presence of energy band gap induced by external gates. We theoretically show that the Klein effect still exists in gapped bilayer graphene, provided that the gaps in the n and p regions are balanced such that the polarization of electron pseudospin has the same normal component to the bilayer plane in the regions. We attribute the Klein effect to Berry phase (rather than the conventional value of bilayer graphene) and to electron-hole and time-reversal symmetries. The Klein effect and the Berry phase can be identified in an electronic Veselago lens, an important component of graphene-based electron optics.
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