Temperature dependencies of the energy and time resolution of silicon drift detectors

TL;DR

This study investigates how temperature affects the energy and time resolution of silicon drift detectors, revealing temperature-dependent behaviors and stability requirements for optimal performance in vacuum conditions.

Contribution

It provides detailed analysis of temperature effects on SDDs and preamplifiers, highlighting optimal operating conditions and stability requirements.

Findings

Energy resolution stabilizes around 150 eV at 6 keV between 130 K and 200 K.

Time resolution exhibits a T^3 dependence within the studied temperature range.

Maintaining preamplifier temperature within 1 K of 280 K stabilizes X-ray peak positions within 1 eV.

Abstract

The response of silicon drift detectors (SDDs), which were mounted together with their preamplifiers inside a vacuum chamber, was studied in a temperature range from 100 K to 200 K. In particular, the energy resolution could be stabilized to about 150 eV at 6 keV between 130 K and 200 K, while the time resolution shows a temperature dependence of T^3 in this temperature range. To keep a variation of the X-ray peak positions within 1 eV, it is necessary to operate the preamplifier within a stability of 1 K around 280 K. A detailed investigation of this temperature influences on SDDs and preamplifiers is presented.