Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications

TL;DR

This paper introduces a compact, physics-based drain-current model for graphene FETs suitable for analog and RF applications, providing explicit formulas validated against measurements and demonstrating predictive accuracy.

Contribution

It presents a novel explicit, closed-form drain-current model for graphene FETs based on physical principles, applicable across all operation regions.

Findings

Model accurately matches measured device data

Provides explicit formulas for all operation regions

Demonstrates predictive capability for RF/analog metrics

Abstract

We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not needed. The physical framework is a field-effect model and drift-diffusion carrier transport. Explicit closed-form expressions have been derived for the drain current covering continuosly all operation regions. The model has been benchmarked with measured prototype devices, demonstrating accuracy and predictive behavior. Finally, we show an example of projection of the intrinsic gain as a figure of merit commonly used in RF /analog applications.