Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves

TL;DR

This paper demonstrates that using low resistive NiFe/MgO/Ag junctions in lateral spin valves significantly enhances spin injection efficiency, resulting in a hundredfold increase in spin valve voltage and enabling long-distance spin precession, advancing spintronic device development.

Contribution

The study introduces a novel approach with low resistive junctions that greatly improves spin injection efficiency and enables long-distance spin precession in metallic lateral spin valves.

Findings

Spin valve voltage increased hundredfold with new junctions

Long-distance spin precession observed over 6 μm

Potential for faster, manipulable spin transport devices

Abstract

The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1 {\mu}V. Here we show that lateral spin valves with low resistive NiFe/MgO/Ag junctions enable the efficient spin injection with high applied current density, which leads to the spin valve voltage increased hundredfold. Hanle effect measurements demonstrate a long-distance collective 2-pi spin precession along a 6 {\mu}m long Ag wire. These results suggest a route to faster and manipulable spin transport for the development of pure spin current based memory, logic and sensing devices.