Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry

TL;DR

This study systematically investigates spin transport in silicon at 8 K using a non-local geometry, revealing how bias electric currents influence spin signals and polarization with unique bias dependence.

Contribution

It provides new insights into the bias dependence of spin signals in silicon, highlighting the robustness of spin polarization against bias variations.

Findings

Spin injection signal increases with bias electric current.

Spin polarization in silicon is less affected by bias changes.

Unique bias dependence observed in spin signals.

Abstract

A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spin in the Si is much less affected by the change in the bias electric current compared with a case of the other spin devices, which induces a unique bias dependence of the spin signals.