Experimental Spin Ratchet
Marius V. Costache, Sergio O. Valenzuela

TL;DR
This paper presents a single-electron spin ratchet device that generates pure spin currents without net charge flow, utilizing asymmetric superconducting single-electron transistors and ferromagnetic leads.
Contribution
It introduces a novel spin ratchet mechanism at the single-electron level using superconducting islands and ferromagnetic leads, demonstrating controlled spin current generation.
Findings
Successful demonstration of spin transport without charge flow.
Quantification of spin ratchet efficiency.
Theoretical modeling supports experimental results.
Abstract
Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport. Our device is based on the ground state energetics of a single electron transistor comprising a superconducting island connected to normal leads via tunnel barriers with different resistances that break spatial symmetry. We demonstrate spin transport and quantify the spin ratchet efficiency using ferromagnetic leads with known spin polarization. Our results are modeled theoretically and provide a robust route to the generation and manipulation of pure spin currents.
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