Atomistic approach to alloy scattering in $Si_{1-x}Ge_{x}$

TL;DR

This paper introduces an atomistic tight-binding model for SiGe alloy scattering, providing a physically grounded alternative to empirical methods, and accurately matching experimental mobility data.

Contribution

It develops a theoretical atomistic model for SiGe alloy scattering, replacing empirical fitting with a physically based approach.

Findings

Model captures bulk alloy scattering potential parameters

Matches experimental mobility data for n-type and p-type carriers

Provides physical insights into alloy scattering mechanisms

Abstract

SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into CMOS technology. However, alloy scattering has till now been treated in an empirical fashion with a fitting parameter. We present a theoretical model within the atomistic tight-binding representation for treating alloy scattering in SiGe. This approach puts the scattering model on a solid atomistic footing with physical insights. The approach is shown to inherently capture the bulk alloy scattering potential parameters for both n-type and p-type carriers and matches experimental mobility data.