Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors

TL;DR

This paper investigates how Rashba spin-orbit interaction influences the electronic states in n-doped semiconductors, focusing on the density of states and localization properties through numerical analysis.

Contribution

It introduces a numerical approach to analyze the effects of enhanced Rashba spin-orbit coupling on impurity-band states in n-doped semiconductors, extending previous models.

Findings

Spin-orbit interaction affects the localization of impurity states.

Enhanced spin-orbit coupling modifies the density of states.

Eigenstates show varying degrees of extension or localization.

Abstract

We study numerically the effects of the Rashba spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter.