Asymmetric pulsing for reliable operation of titanium/manganite memristors

TL;DR

This paper introduces an asymmetric pulsing protocol that enhances the endurance and reliability of titanium-manganite memristors by canceling resistance drift, supported by experimental and numerical modeling results.

Contribution

The study presents a novel pulsing algorithm that maintains resistance stability in memristors over extensive cycling, improving their practical applicability.

Findings

Endurance increased to over 10^5 cycles with drift-free operation.

Proper pulse amplitude is crucial to prevent detrimental effects.

Numerical model elucidates oxygen vacancy dynamics during switching.

Abstract

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.