Weak antilocalization in HgTe quantum wells and topological surface states: Massive versus massless Dirac fermions
G. Tkachov, E. M. Hankiewicz

TL;DR
This paper compares weak antilocalization effects in HgTe quantum wells and topological insulator surface states, highlighting how a finite Dirac mass in HgTe influences quantum interference and magnetoconductivity.
Contribution
It provides a theoretical analysis of how finite Dirac mass suppresses weak antilocalization in HgTe quantum wells, contrasting with massless topological surface states.
Findings
Weak antilocalization is suppressed in HgTe quantum wells at long times due to a relaxation gap.
The relaxation gap depends nonmonotonically on carrier density and band gap.
Topological surface states show distinct magnetoconductivity behavior in parallel magnetic fields.
Abstract
HgTe quantum wells and surfaces of three-dimensional topological insulators support Dirac fermions with a single-valley band dispersion. In the presence of disorder they experience weak antilocalization, which has been observed in recent transport experiments. In this work we conduct a comparative theoretical study of the weak antilocalization in HgTe quantum wells and topological surface states. The difference between these two single-valley systems comes from a finite band gap (effective Dirac mass) in HgTe quantum wells in contrast to gapless (massless) surface states in topological insulators. The finite effective Dirac mass implies a broken internal symmetry, leading to suppression of the weak antilocalization in HgTe quantum wells at times larger than certain t_M, inversely proportional to the Dirac mass. This corresponds to the opening of a relaxation gap 1/t_M in the Cooperon…
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