In situ TEM investigation of oxygen migration as a key mechanism for resistive switching in Pr0.7Ca0.3MnO3

TL;DR

This study uses in situ TEM to observe oxygen ion migration in Pr0.7Ca0.3MnO3 thin films, revealing it as a key mechanism behind resistive switching in these devices.

Contribution

It provides direct microscopic evidence of oxygen migration during resistive switching, advancing understanding of the micro-mechanism in PCMO-based devices.

Findings

Oxygen ions migrate under electric field during switching.

Modulation stripes in PCMO disappear with electric field application.

Oxygen migration correlates with resistance change.

Abstract

Low temperature growth Pr0.7Ca0.3MnO3 (PCMO) thin film showed high performance in electric field induced resistance switching (RS). To understand the micro-mechanism of RS in Metal/PCMO/Metal devices, structure evolution of PCMO under external electric field monitored inside transmission electron microscope (TEM) were performed. Evolution of the modulation stripe in as-grown PCMO sample was investigated when applying electric field. The new-generated modulation stripe gradually disappeared. These results indicate that oxygen ion migration plays a key role in RS.