Formation and Rupture of the Nanosized Metal Filament inside Oxide Matrix
G. B. Stefanovich, M. J. Lee, B. S. Kang, S.-E. Ahn, K. H. Kim, C. B., Lee, C.J. Kim, and Y.S. Park
TL;DR
This paper introduces a model describing how nanosized metal filaments form and rupture within an oxide matrix, exemplified by NiO, to better understand ReRAM device operation.
Contribution
It provides a new model for filament formation and rupture in oxide-based ReRAM, enhancing understanding of resistive switching mechanisms.
Findings
Model successfully simulates filament formation and rupture.
NiO used as a case study for ReRAM operation.
Insights into resistive switching behavior.
Abstract
The paper presents a model of the electrically actuated formation and rupture of the nanosized metal filament inside oxide matrix. NiO oxide is used as an example for this model of ReRAM operation.
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Taxonomy
TopicsSemiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Advancements in Photolithography Techniques