Design and modeling of a transistor vertical-cavity surface-emitting laser

TL;DR

This paper presents the design and numerical modeling of a novel transistor-based VCSEL with quantum well structures, analyzing physical processes and predicting high-speed modulation capabilities up to 40 Gbps.

Contribution

It introduces a new T-VCSEL design with detailed physical modeling and validates it through comparison with experimental data.

Findings

Quantum capture/escape significantly affects electrical output.

Model accurately predicts frequency response and modulation up to 40 Gbps.

Validated physical models enhance understanding of T-VCSEL behavior.

Abstract

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.