Graphene Field Effect Transistors: Diffusion-Drift Theory

TL;DR

This paper develops a semi-classical diffusion-drift model for graphene FETs based on explicit solutions of the current continuity equation, incorporating the effects of interface traps on device behavior.

Contribution

It introduces a novel analytical model for carrier transport in graphene FETs that explicitly accounts for interface traps, enhancing understanding of device physics.

Findings

Analytical diffusion-drift model for graphene FETs derived

Impact of interface traps on I-V characteristics analyzed

Model provides insights into defect-related device behavior

Abstract

Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects (interface traps) near or at the interface between graphene and insulated layers has also described.