Enhancement of edge channel transport by a low frequency irradiation

TL;DR

This paper demonstrates that low-frequency microwave irradiation can significantly reduce resistance in high mobility 2D electron gases, emphasizing the role of edge channels in zero resistance states.

Contribution

It provides experimental evidence that microwave irradiation influences edge channel transport, offering a new perspective beyond bulk models for zero resistance states.

Findings

Microwave irradiation decreases four-terminal resistance.

Edge transport models explain the observed effects.

Highlights importance of edge channels in zero resistance phenomena.

Abstract

The magnetotransport properties of high mobility two dimensional electron gas have recently attracted a significant interest due to the discovery of microwave induced zero resistance states. Here we show experimentally that microwave irradiation with a photon energy much smaller than the spacing between Landau levels can induce a strong decrease in the four terminal resistance. This effect is not predicted by the bulk transport models introduced to explain zero resistance states, but can be naturally explained by an edge transport model. This highlights the importance of edge channels for zero resistance state physics that was proposed recently.