Determination of the bandgap and split-off band of wurtzite GaAs
Bernt Ketterer, Martin Heiss, Marie J. Livrozet, Elisabeth Reiger and, Anna Fontcuberta i Morral
TL;DR
This study synthesizes wurtzite GaAs nanowires and employs spectroscopic techniques to accurately determine its bandgap and split-off band, providing key electronic properties for potential optoelectronic applications.
Contribution
It presents the first precise measurement of the bandgap and split-off band of wurtzite GaAs using resonant Raman and photoluminescence spectroscopy.
Findings
Bandgap of wurtzite GaAs is 1.523 eV or lower.
Split-off band position at 1.982 eV at 0 K.
Consistent results from multiple spectroscopic methods.
Abstract
GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of GaAs wurtzite below 1.523 eV.
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