High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

TL;DR

This study uses high-resolution cathodoluminescence hyperspectral imaging to analyze surface features in InGaN/GaN quantum wells, revealing localized energy shifts and intensity variations at the nanoscale.

Contribution

It demonstrates the application of hyperspectral imaging for nanoscale analysis of surface features in quantum well structures, providing detailed insights into their optical properties.

Findings

Trench-like features cause a 45 meV red-shift in emission.

V-pits cause a 20 meV blue-shift and weaker emission.

Energy and intensity shifts are observable at 10 nm resolution.

Abstract

InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trench-like features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trench-like features is red-shifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blue-shifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.