Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon

TL;DR

This paper demonstrates electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon, enabling observation of Ramsey fringes within 150 ns despite inhomogeneous broadening.

Contribution

It introduces a novel electrical detection method for FID and Hahn echoes in solid-state spins, with an analytical model and numerical analysis for spin interactions.

Findings

Ramsey fringes observed within 150 ns

Analytical model successfully explains the data

Numerical calculations assess spin-spin interactions

Abstract

Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, experimental results of an electrically detected FID of phosphorus donors in silicon epilayers with natural isotope composition are presented, showing Ramsey fringes within the first 150 ns. An analytical model is developed to account for the data obtained as well as for the results of analogous two-pulse echo experiments. The results of a numerical calculation are further presented to assess the capability of the method to study spin-spin interactions.