Conductive Atomic Force Microscopy of Chemically Synthesized Graphene Oxide and Interlayer Conduction

TL;DR

This study uses conductive atomic force microscopy to explore the intrinsic electrical properties of chemically synthesized graphene oxide nanosheets, revealing conduction mechanisms and permittivity values.

Contribution

It provides detailed local electrical characterization of GO nanosheets, including conduction mechanisms and permittivity, which were not extensively studied before.

Findings

Conduction in GO follows Poole-Frenkel emission mechanism.

Relative permittivity of GO is approximately 4.8.

High-contrast imaging reveals GO thickness and surface features.

Abstract

Graphene oxide (GO) is one of chemically modified graphenes and has been extensively investigated worldwide. A monolayer sheet of GO can be chemically produced in solution and it has been expected to be adaptable to a wide variety of applications. Most of works have focused on fabrication and reduction processes of GO, while its intrinsic property has not been explored in detail. We have succeeded in fabricating large scale GO nanosheets reproducibly. In the present work, we observed GO nanosheets by conductive atomic force microscopy. The current image is useful to monitor the GO thickness as well as wrinkles and folds in the nanosheet with high contrast. In addition to the current images, local I-V characteristics of the GO sheet were measured with the conductive cantilever. Based on the applied electric filed dependence, the conduction normal to the GO sheet could be described in terms of Poole Frenkel emission mechanism and the relative permittivity of GO is evaluated to be 4.8.