Conductance modulation in graphene nanoribbon under transver-se asymmetric electric potential

TL;DR

This study explores how transverse asymmetric electric potentials and hollow structures in graphene nanoribbons can modulate their electronic transport properties, potentially enabling advanced graphene-based electronic devices.

Contribution

It introduces the concept of using hollowed AGNRs with asymmetric gating to significantly control conductance and transport gaps, advancing the design of graphene electronic components.

Findings

Hollowed AGNRs in dual-gate configurations greatly modulate the transport gap.

Hollowed channels exhibit optimal ON/OFF conductance ratios.

Hollow geometry enhances the effectiveness of transverse gate modulation.

Abstract

We theoretically study the effect of transverse electric potentials on the transport properties of armchair graphene nanoribbons (AGNRs), formed by pairs of asymme-tric gates placed along the side of the ribbon. Single pair and dual pair configurations are considered. We also examine the effect of hollows (spatial regions void of carbon atoms) in the AGNR channels. We find that the use of hollowed AGNRs in the dual pair configuration allows for a significant modulation of the transport gap, when the two pairs have opposite polarity of gate bias. Furthermore, we show that for the dual-gate system, hollowed AGNR channels exhibit the optimal ratio of ON-state to OFF-state conductance, due to the smaller OFF-state conductance compared with spatially homogenous AGNR channels. Our results indicate that transverse gate technology coupled with careful engineering of hollow geometry may lead to possible applications in graphene-based electronic devices.