On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

TL;DR

This paper demonstrates broadband on-chip parametric amplification at telecom wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides, achieving up to 26.5 dB gain, with detailed nonlinear optical property measurements.

Contribution

First experimental study of parametric amplification in hydrogenated amorphous silicon waveguides with high gain at telecom wavelengths.

Findings

Achieved 26.5 dB on/off amplification at telecom wavelengths.

Measured nonlinear parameter of 770 W^{-1} m^{-1}.

Identified nonlinear absorption of 28 W^{-1} m^{-1}.

Abstract

We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.