Influence of Electron-electron Drag on Piezoresistance of n-Si

TL;DR

This paper investigates how electron-electron inter-valley drag influences the piezoresistance in n-type silicon, revealing that it enhances the piezocoefficient and reduces mobility, especially at higher carrier concentrations and lower temperatures.

Contribution

It introduces the consideration of inter-valley drag effects into the analysis of piezoresistance in n-Si, highlighting its impact on piezocoefficient and mobility.

Findings

Inter-valley drag increases the piezocoefficient.

Inter-valley drag diminishes carrier mobility.

Effect of drag intensifies with higher carrier concentration and lower temperature.

Abstract

Piezoresistance of n-Si is considered with due regard for inter-valley drag. It is shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers the effect of drag increases when carrier concentration rises and temperature falls.