Strain control of electron-phonon energy loss rate in many-valley semiconductors

TL;DR

This paper shows how lattice mismatch-induced strain in many-valley semiconductors can drastically reduce the electron-phonon energy loss rate, affecting thermal conductance at cryogenic temperatures.

Contribution

It demonstrates a significant reduction in electron-phonon energy loss rate due to strain in many-valley semiconductors, a novel control mechanism for thermal management.

Findings

Electron-phonon energy loss rate is over ten times lower in strained samples.

Strain modifies thermal conductance between electrons and phonons.

Results are observed at cryogenic temperatures between 200 mK and 450 mK.

Abstract

We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.