Field enhanced electron mobility by nonlinear phonon scattering of Dirac electrons in semiconducting graphene nanoribbons
Danhong Huang, Godfrey Gumbs, O. Roslyak

TL;DR
This study investigates how nonlinear phonon scattering influences electron mobility in semiconducting graphene nanoribbons, revealing a threshold field for nonlinear transport and an initial mobility enhancement due to high-energy electron states.
Contribution
It introduces a detailed analysis of nonlinear electron transport in graphene nanoribbons, highlighting the role of phonon scattering and edge roughness in mobility behavior under high electric fields.
Findings
Mobility exhibits a threshold field for nonlinear transport.
Mobility enhancement occurs due to high-energy electron states.
High-field edge roughness scattering increases with decreasing correlation length.
Abstract
The calculated electron mobility for a graphene nanoribbon as a function of applied electric field has been found to have a large threshold field for entering a nonlinear transport regime. This field depends on the lattice temperature, electron density, impurity scattering strength, nanoribbon width and correlation length for the line-edge roughness. An enhanced electron mobility beyond this threshold has been observed, which is related to the initially-heated electrons in high energy states with a larger group velocity. However, this mobility enhancement quickly reaches a maximum due to the Fermi velocity in graphene and the dramatically increased phonon scattering. Super-linear and sub-linear temperature dependence of mobility seen in the linear and nonlinear transport regimes. By analyzing the calculated non-equilibrium electron distribution function, this difference is attributed…
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