Theoretical comparison of quantum and thermal noise squeezing in silicon and graphene nanoresonators

TL;DR

This paper theoretically compares quantum and thermal noise squeezing in silicon and graphene nanoresonators, showing graphene's superior squeezing potential due to its thinness, with significant noise reduction at low temperatures.

Contribution

It provides a theoretical analysis of noise squeezing differences between silicon and graphene nanoresonators based on experimental parameters, highlighting graphene's advantages.

Findings

Graphene nanoresonators achieve smaller squeezing factors than silicon.

Both quantum and thermal noise can be reduced by 12.58 dB at 5 K in graphene.

Graphene's thinness enhances its noise squeezing capabilities.

Abstract

We theoretically compared quantum noise squeezing differences between silicon and graphene nanoresonators based on experimental structure parameters. The conditions to achieve squeezed states of silicon and graphene have been discussed. According to our theoretical analysis, graphene nanoresonators can obtain a much smaller squeezing factor than silicon, taking advantage of their thin thickness. Both the quantum noise and thermal noise (Brownian motion) of typical monolayer graphene nanoresonator can be reduced by 12.58 dB at T = 5 K with a pump voltage of 5 V.