Anomalous magnetic transport in ferromagnetic graphene junctions

TL;DR

This paper explores how a gate voltage can control charge conductance and spin-transfer torque in a ferromagnetic graphene junction, enabling potential applications in spintronic devices.

Contribution

It demonstrates the control of magnetotransport and spin-transfer torque via gate voltage in a ferromagnetic graphene system, introducing a spin-transfer torque transistor concept.

Findings

Charge conductance peaks at antiparallel magnetization configurations.

Gate voltage can reverse the sign of spin-transfer torque.

Potential to manipulate domain walls with local gating.

Abstract

We investigate magnetotransport in a ferromagnetic/normal/ferromagnetic graphene junction where a gate electrode is attached to the normal segment. It is shown that the charge conductance can be maximal at an antiparallel configuration of the magnetizations. Moreover, we demonstrate that both the magnitude and the sign of the spin-transfer torque can be controlled by means of the gate voltage in the normal segment. In this way, the present system constitutes a spin-transfer torque transistor. These anomalous phenomena are attributed to the combined effect of the exchange field and the Dirac dispersion of graphene. Our prediction opens up the possibility of moving domain walls parallel or antiparallel to the current in a controllable fashion by means of a local gate voltage.