Graphene field-effect transistors based on boron nitride gate dielectrics

TL;DR

This paper reports on graphene field-effect transistors fabricated with hexagonal boron nitride as the gate dielectric, showing high mobility and good current saturation, highlighting h-BN's suitability for high-performance graphene electronics.

Contribution

It introduces the use of single-crystal h-BN as a gate dielectric in graphene FETs, demonstrating enhanced device performance and favorable properties over traditional dielectrics.

Findings

Mobility exceeding 10,000 cm2/V-sec

Current saturation at 500 nm channel length

Intrinsic transconductance above 400 mS/mm

Abstract

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs.