Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering

TL;DR

This study uses Raman spectroscopy to analyze how substrate interactions affect the thermal behavior of graphene layers, revealing substrate pinning effects in epitaxial and supported graphene.

Contribution

It provides a quantitative analysis of substrate pinning in graphene via Raman shift measurements, distinguishing between pinned and unpinned states on different substrates.

Findings

Epitaxial graphene on SiC shows a threefold higher thermal shift rate than freestanding graphene.

Graphene on Ni behaves elastically as if unpinned despite strong interaction.

Transfer protocols can alter the pinning state of exfoliated graphene layers.

Abstract

The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contrast, graphene grown on polycrystalline Ni films is shown to be unpinned, i.e., to behave elastically as freestanding, despite the relatively strong interaction with the metal substrate. Moreover, it is shown that the transfer of exfoliated graphene layers onto a supporting substrate can result in pinned or unpinned layers, depending on the transfer protocol.