Tuneable electronic properties in graphene

TL;DR

This paper reviews recent advances in the physics and fabrication of double gated graphene devices, highlighting their tunable electronic properties such as band gaps and overlaps for future nanoelectronic applications.

Contribution

It presents new insights into the tunable electronic properties of graphene achieved through double gating techniques in single- and few-layer structures.

Findings

Discovery of gate tunable band gap in bilayer graphene

Observation of gate tunable band overlap in trilayer graphene

Implementation of relativistic tunneling experiments in graphene devices

Abstract

Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices.