Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity
Fei Chen, A. J. Sirois, R. W. Simmonds, A. J. Rimberg

TL;DR
This paper presents a method to apply dc bias to a high-Q superconducting microwave cavity with minimal impact on its performance, verified through measurements and simulations.
Contribution
It introduces a novel technique for integrating dc bias lines into superconducting cavities without significantly degrading their quality factor.
Findings
Quality factor degrades less than 1% at 4 K with dc bias
Measured S-matrix matches theoretical predictions
Method preserves cavity mode integrity during bias application
Abstract
We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that at 4 K the quality factor of the cavity degrades by less than 1% under the application of a dc bias.
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Taxonomy
TopicsParticle accelerators and beam dynamics · Magnetic confinement fusion research · Physics of Superconductivity and Magnetism
